<definition version="0.100.0" type="element" link_type="simple" width="30" height="40" hotspot_x="25" hotspot_y="30">
    <uuid uuid="{4f88e5f0-1ea5-c867-e146-e24dc0c36734}"/>
    <names>
        <name lang="ca">Tipus de conductivitat del canal, canal de tipus P sobre un substrat de tipus N</name>
        <name lang="cs">Kanál P na podložce typu N,
zobrazen pro obohacovací typ IGFET</name>
        <name lang="de">IGFET, Kennzeichnung der Art des Substrats:
- P-leitender Kanal auf einem N-Substrat</name>
        <name lang="en">Conductivity type of the channel, P-type channel on an N-type substrate</name>
        <name lang="fr">Indication du type de conductivité du canal
pour transistors à effet de champ à grille solé
(IGFET):
- canal de type P avec substrat de type N,
figuré pour un dispositif à enrichissement</name>
    </names>
    <informations>Author: The QElectroTech team
License: see http://qelectrotech.org/wiki/doc/elements_license</informations>
    <description>
        <dynamic_text x="5" y="2.5" z="1" text_width="-1" Halignment="AlignLeft" Valignment="AlignTop" frame="false" rotation="0" keep_visual_rotation="false" text_from="ElementInfo" uuid="{e11a168f-e3e3-49a5-8139-519c3da40cce}" font="Liberation Sans,9,-1,5,50,0,0,0,0,0,Regular">
            <text></text>
            <info_name>label</info_name>
        </dynamic_text>
        <line x1="-20" y1="-10" x2="0" y2="-10" end1="none" end2="none" length1="1.5" length2="1.5" style="line-style:normal;line-weight:normal;filling:none;color:black" antialias="false"/>
        <line x1="-20" y1="-25" x2="-20" y2="5" end1="none" end2="none" length1="1.5" length2="1.5" style="line-style:normal;line-weight:normal;filling:none;color:black" antialias="false"/>
        <polygon x1="-15" y1="-15" x2="-10" y2="-10" x3="-15" y3="-5" closed="false" antialias="false" style="line-style:normal;line-weight:normal;filling:none;color:black"/>
    </description>
</definition>
