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    <names>
        <name lang="ca">Transistor d'efecte de camp de porta aïllada tipus de millora IGFET, porta única, N-</name>
        <name lang="cs">IGFET-Tranzisstor, obohacovací typ, jedno hradlo, kanál N,
s podložkou vnitřně připojenou k emitoru</name>
        <name lang="de">IGFET-Transisstor, Anreicherungstyp, ein
Gate, N-Kanal, Substrat intern mit Source
verbunden</name>
        <name lang="en">Insulated gate field effect transistor IGFET enhancement type, single gate, N-</name>
        <name lang="fr">Transistor IGFET à enrichissement à une seule
grille, canal N, avec substrat relié
intérieurement à la source</name>
    </names>
    <informations>Author: The QElectroTech team
License: see http://qelectrotech.org/wiki/doc/elements_license</informations>
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