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    <names>
        <name lang="fr">Transistor IGFET à enrichissement à une seule
grille, canal P, avec substrat connecté
séparément</name>
        <name lang="de">IGFET-Transistor, Anreicherungstyp, ein Gate,
P-Kanal, mit Substratanschluß</name>
        <name lang="cs">IGFET-Tranzistor, obohacovací typ, jedno hradlo,
kanál P, s odděleně připojenou podložkou</name>
        <name lang="en">Insulated gate field effect transistor IGFET enhancement type, single gate, P-</name>
    </names>
    <elementInformations/>
    <informations>Author: The QElectroTech team
License: see http://qelectrotech.org/wiki/doc/elements_license</informations>
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